Hong, C.-C.C.-C.HongChen, J.-L.J.-L.ChenJENN-GWO HWU2018-09-102018-09-102002https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036494479&doi=10.1116%2f1.1453455&partnerID=40&md5=05f4425de429551b3ffe03208ff29b30http://scholars.lib.ntu.edu.tw/handle/123456789/296936The growth of thin oxides by rapid thermal processing (RTP) under different O2 pressures and comparison of the uniformity of oxides by two-step oxidation and by typical one-step oxidation was presented. The process indicated that as oxidation time increases high pressure tends to make oxide thickness less uniform. The results showed that oxide thickness uniformity exhibits a 'self-compensating' behavior in low pressure oxidation, and tends to degrade with oxidation under high pressure oxidation.Dielectric materials; Electric breakdown; Film growth; Gates (transistor); Pressure effects; Rapid thermal annealing; Rate constants; Thermooxidation; Thin oxides; Thin filmsjournal article10.1116/1.14534552-s2.0-0036494479