The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO 2 layer

Chen, P.-H.P.-H.ChenPeng, H.-Y.H.-Y.PengHsieh, C.-M.C.-M.HsiehChyu, M.K.M.K.ChyuPING-HEI CHEN2018-09-102018-09-102001http://www.scopus.com/inward/record.url?eid=2-s2.0-0035975618&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/292634The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO 2 layerjournal article10.1016/S0924-4247(01)00639-2