詹國禎2006-07-252018-07-052006-07-252018-07-052002-09-30http://ntur.lib.ntu.edu.tw//handle/246246/11212在不同溫度下，以光調制反射率光譜及光激發螢光光譜術量測砷化銦鎵/砷化鎵量子點結構 的光學特性，此量子點結構樣品表面經由場發射電子掃描顯微術及原子力顯微術量測分析，其量 子點面密度約為每平方公分1×1010 個。在光激發螢光光譜中顯現五個光學躍遷能譜，其中較低 的兩個為量子點內能階躍遷，其次為伴隨形成之超薄量子井的躍遷，最高的兩個能階則為砷化鎵 位障及緩衝層所產生。從溫度與躍遷能值關係可推論，兩個量子點的躍遷能譜的來源應是兩群由 不同銦成分所構成之量子點的最低能態間光學躍遷所造成。The optical properties of InGaAs/GaAs quantum dots (QDs) were investigated by temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectroscopies. The surface morphology and structure analysis of InGaAs QDs were also examined and characterized by a field emission scanning electron microscope (SEM) and an atomic force microscope (AFM). The area density of the QDs is on an order of magnitude about 1×1010 dots/cm2. The PL results exhibited 5 major energy peaks, two of which are attributed to InGaAs QDs, one is attributed to the InGaAs wetting layer and the other two are attributed to GaAs band-gap transitions. Two of the low energy features are identified to the optical transitions of the ground state. They were originated from the two kinds of InGaAs QDs which might be formed with slight change of the indium composition. The results of PR measurements which reveal energy features on the high energy side contributed by GaAs is also reported.application/pdf607609 bytesapplication/pdfzh-TW國立臺灣大學光電工程學研究所InGaAsQuantum dotsPhotoluminescenceSEMAFMreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/11212/1/902215E002021.pdf