Dynamic Rdsonand VthFree 15 V E-mode GaN HEMT Delivering Low sFOM of 13.1 mΩ•nC and over 90% Efficiency at 10 MHz for Buck Converter

Li, William S.C.William S.C.LiZhou, David C.David C.ZhouYan, H.H.YanZhang, J. F.J. F.ZhangMa, H. H.H. H.MaChen, C.C.ChenJIAN-JANG HUANGLiu, X. M.X. M.LiuLi, W. P.W. P.LiWu, MarcoMarcoWuChen, LarryLarryChenWang, FelixFelixWangWong, Roy K.Y.Roy K.Y.WongZhang, JeffJeffZhangLee, MarkMarkLeeCheng, EchoEchoChengHan, AndyAndyHan2023-05-092023-05-092022-01-01978166542201710636854https://scholars.lib.ntu.edu.tw/handle/123456789/630959To achieve fast, efficient, reliable and compact power converter, this paper reports 15 V GaN HEMT featuring: (i) low sFoM of 13.1 mΩ•nC, (ii) robust reliability under constant gate and drain stress over wide temperature range from -40 °C to 150 °C in 1000 hours, (iii) dynamic Rdson and Vth free operation demonstrated in MHz switching frequency converters. The buck converter with the fabricated GaN HEMTs in half bridge configuration demonstrates over 90% efficiency at 10 MHz under conversion ratio of 5 V Vin/ 1.5~4 V Vout. When the switching frequency increases to 30 MHz, the converter still remains over 80% efficiency.dynamic free | FoM | GaN HEMT | MHz operation | reliabilityDynamic Rdsonand VthFree 15 V E-mode GaN HEMT Delivering Low sFOM of 13.1 mΩ•nC and over 90% Efficiency at 10 MHz for Buck Converterconference paper10.1109/ISPSD49238.2022.98136322-s2.0-85134251682https://api.elsevier.com/content/abstract/scopus_id/85134251682