Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET

M.-L. FanV. P.-H. HuY.-N. ChenC.-W. HsuPin SuC.-T. ChuangVITA PI-HO HUM.-L. FanV. P.-H. HuY.-N. ChenC.-W. HsuPin SuC.-T. Chuang胡璧合2020-10-072020-10-072015https://scholars.lib.ntu.edu.tw/handle/123456789/516592Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FETjournal article10.1109/ted.2014.23685812-s2.0-84920200907