Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors

CHEE-WEE LIULin, Y.M.Y.M.LinSan Lein, W.U.W.U.San LeinChang, S.J.S.J.ChangChen, P.S.P.S.ChenCHEE-WEE LIU2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-33646855601&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/324164Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistorsjournal article10.1143/JJAP.45.4006