Tang, S.-F.S.-F.TangLin, S.-Y.S.-Y.LinSI-CHEN LEE2020-06-112020-06-11200100036951https://scholars.lib.ntu.edu.tw/handle/123456789/498754https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035938375&doi=10.1063%2f1.1362201&partnerID=40&md5=555c0ed57e86910431b456d2fcba6dd5A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (≥250 K) was demonstrated. The specific peak detectivity D* is 2.4×108 cm Hz1/2/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. © 2001 American Institute of Physics.[SDGs]SDG7journal article10.1063/1.13622012-s2.0-0035938375