Wu, H.-C.H.-C.WuChaika, A.N.A.N.ChaikaHsu, M.-C.M.-C.HsuHuang, T.-W.T.-W.HuangAbid, M.M.AbidAbid, M.M.AbidAristov, V.Y.V.Y.AristovMolodtsova, O.V.O.V.MolodtsovaBabenkov, S.V.S.V.BabenkovNiu, Y.Y.NiuMurphy, B.E.B.E.MurphyKrasnikov, S.A.S.A.KrasnikovL?bben, O.O.L?bbenLiu, H.H.LiuChun, B.S.B.S.ChunJanabi, Y.T.Y.T.JanabiMolotkov, S.N.S.N.MolotkovShvets, I.V.I.V.ShvetsLichtenstein, A.I.A.I.LichtensteinKatsnelson, M.I.M.I.KatsnelsonCHING-RAY CHANG2019-12-192019-12-192017https://scholars.lib.ntu.edu.tw/handle/123456789/436477Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphenejournal article10.1038/ncomms144532-s2.0-85012928733https://www.scopus.com/inward/record.uri?eid=2-s2.0-85012928733&doi=10.1038%2fncomms14453&partnerID=40&md5=fb810fae53dbf7a0ec3b1ef5c232bfc2