MINGHWEI HONGRen, FFRenKuo, JMJMKuoHobson, WSWSHobsonKwo, JJKwoMannaerts, JPJPMannaertsLothian, JRJRLothianChen, YKYKChen2018-09-102018-09-101998http://scholars.lib.ntu.edu.tw/handle/123456789/340165Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxidejournal article