張顏暉臺灣大學：物理研究所林詠絮Lin, Yung-HsuYung-HsuLin2007-11-262018-06-282007-11-262018-06-282007http://ntur.lib.ntu.edu.tw//handle/246246/54569Monolayer graphite thin film (graphene) has attracted much attention recently because of its many unique properties and potential applications. In this thesis, we describe the method we developed to fabricate graphene-based device. Mechanical proliferation was used to create thin graphite fakes on the surface of SiO2 which was grown on top of n+ silicon substrate. Optical and Atomic force microscope were then used to identify the position and thickness of the graphene flakes. Electron beam lithography was then employed to make contacts to these graphene flakes. The problems that were encountered and solved in these processes will be are presented and discussed in this thesis.List of Figures i Chapter 1 1 Introduction 1 1.1 Graphene 1 1.2 Thesis overview 3 References 4 Chapter 2 6 Theoretical Background 6 2.1 Graphite 6 2.1.2 Anisotropic properties of graphite 7 2.1.3 Highly Orientated Pyrolytic Graphite 8 2.1.4 Few-layer graphite: graphene 9 2.2 Gate-controlled device 10 2.3 Properties of graphene 11 2.3.1 Gate-controlled graphene device 12 2.3.2 Dependence of Resistivity on gate voltage 13 2.3.3 Dependence of Hall coefficient on gate voltage 14 2.3.4 EFE on graphite with different thickness 15 References 19 Chapter 3 20 Experimental Apparatus and Procedures 20 3.1 Atomic Force Microscope 20 3.1.1 Basic Principles of Atomic Force Microscope 20 3.1.2 Three Imaging Modes 20 3.2 E-beam Lithography 22 3.2.1 Introduction 22 3.2.3 Proximity effect 24 3.3 Hall Effect 25 3.4 Experimental Procedures 28 3.4.1 Preparing graphite thin films 28 3.4.2 Photo Lithography 29 3.4.3 Marking the position of graphite films by Atomic Force Microscope (AFM) 30 3.4.4 Electron Beam Lithography 31 3.4.5 Measurement by Hall System 32 References 34 Chapter 4 35 Experiment Results and Discussions 35 4.1 Search and Observation of thin graphite by AFM 35 4.2 Results of E-beam Lithography 40 4.3 Hall measurement 42 4.3.1 Sample YH269 42 4.3.2 Sample YH294 44 4.4 Some improvements for device process 50 4.4.1 Cleaning the substrate 50 4.4.2 Minimization the error of E-beam lithography 50 4.4.3 Trick for lift-off 51 4.4.4 Attention to weld the package 51 Reference 53 Chapter 5 54 Conclusion 541849982 bytesapplication/pdfen-US電子束石墨薄膜Electron Beam LithographyGraphitethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/54569/1/ntu-96-R93222056-1.pdf