Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric

Chen, C.-P.C.-P.ChenLin, T.-D.T.-D.LinChang, Y.-C.Y.-C.ChangMINGHWEI HONGKwo, J.R.J.R.Kwo2019-12-272019-12-272007https://scholars.lib.ntu.edu.tw/handle/123456789/443432Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectricconference paper10.1109/ISDRS.2007.44222342-s2.0-44949102459https://www.scopus.com/inward/record.uri?eid=2-s2.0-44949102459&doi=10.1109%2fISDRS.2007.4422234&partnerID=40&md5=0e396c14b3ed56fea1225f7d765d6f6d