InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation

Chang, Y.C.Y.C.ChangHuang, M.L.M.L.HuangLee, Y.J.Y.J.LeeLee, K.Y.K.Y.LeeLin, T.D.T.D.LinMINGHWEI HONGKwo, J.J.KwoLiao, C.C.C.C.LiaoCheng, K.Y.K.Y.ChengLay, T.S.T.S.Lay2019-12-272019-12-272007https://scholars.lib.ntu.edu.tw/handle/123456789/443433InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivationconference paper10.1109/ISDRS.2007.44222432-s2.0-44949136509https://www.scopus.com/inward/record.uri?eid=2-s2.0-44949136509&doi=10.1109%2fISDRS.2007.4422243&partnerID=40&md5=eb89fb6f34a9330c56fae988aca25163