Dept. of Electr. Eng., National Taiwan Univ.CHING-FUH LINMIIN-JANG CHENLiang, Eih-ZheEih-ZheLiangLiu, W.T.W.T.LiuChang, S.T.S.T.ChangCHEE-WEE LIU2007-04-192018-07-062007-04-192018-07-06Dec-00N/Ahttp://ntur.lib.ntu.edu.tw//handle/246246/2007041910043023http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910043023/1/01022975.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84949771253&doi=10.1109%2fCOMMAD.2000.1022975&partnerID=40&md5=f3e22e4f0bb573757f7e079b31eee076Room temperature electroluminescence from metal-insulator-semiconductor (MIS) structures on Si was observed. Several types of MIS structures such as Al/SiO2/Si, ITO/SiO2/Si, and mechanically pressed ITO/Si contact, has been investigated. Both band-edge and visible electroluminescence are observed from the ITO/SO2/Si structures. The devices based on the Al/SiO2/Si structure exhibit efficient band-edge electroluminescence. Electroluminescence near the silicon bandgap energy is also achieved from MIS structures using an innovative mechanically pressed ITO/Si contact. Optical phonons, interface roughness, localized carriers and impact ionization are used to explain radiative recombination in MIS structures. © 2000 IEEE.application/pdf282688 bytesapplication/pdfen-USAluminum; Electroluminescence; Impact ionization; Metal insulator boundaries; Microelectronics; MIS devices; Semiconductor insulator boundaries; Band edge; Interface roughness; Localized carriers; Metal insulator semiconductor structures; MIS structure; Optical phonons; Radiative recombination; Silicon band gap; Semiconducting siliconconference paper10.1109/COMMAD.2000.10229752-s2.0-84949771253http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910043023/1/01022975.pdf