Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells

Chen, C.-Y.C.-Y.ChenChang, W.-M.W.-M.ChangChung, W.-L.W.-L.ChungHsieh, C.C.HsiehLiao, C.-H.C.-H.LiaoTing, S.-Y.S.-Y.TingChen, K.-Y.K.-Y.ChenKiang, Y.-W.Y.-W.KiangYang, C.C.C.C.YangSu, W.-S.W.-S.SuCHIH-CHUNG YANGYEAN-WOEI KIANG2020-06-112020-06-112014https://scholars.lib.ntu.edu.tw/handle/123456789/497832Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wellsjournal article10.1016/j.jcrysgro.2014.03.0252-s2.0-84898076702https://www.scopus.com/inward/record.uri?eid=2-s2.0-84898076702&doi=10.1016%2fj.jcrysgro.2014.03.025&partnerID=40&md5=eae33c7fb3cf7fed15e23bdf1cd375e3