Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors

CHEE-WEE LIULu, T.M.T.M.LuLee, C.-H.C.-H.LeeHuang, S.-H.S.-H.HuangTsui, D.C.D.C.TsuiCHEE-WEE LIU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-80055015445&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/365221Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistorsjournal article10.1063/1.3652909