Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Lee, S.W.S.W.LeeChen, P.S.P.S.ChenCheng, S.L.S.L.ChengLee, M.H.M.H.LeeChang, H.T.H.T.ChangLee, C.-H.C.-H.LeeLiu, C.W.C.W.Liu2009-03-252018-07-062009-03-252018-07-062008http://ntur.lib.ntu.edu.tw//handle/246246/148254application/pdf695519 bytesapplication/pdfen-USModified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor depositionjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148254/1/83.pdf