劉致為臺灣大學：電子工程學研究所賴宏諱Lai, Hung HuiHung HuiLai2007-11-272018-07-102007-11-272018-07-102005http://ntur.lib.ntu.edu.tw//handle/246246/57269在本論文中，我們介紹了功率放大器基本設計概念與流程。此外，本論文設計與製作了數個應用於IEEE 802.11b/g無線網路通訊協定，以金氧半與矽鍺製程製作的2.4GHz的無線功率放大器。以0.25微米金氧半製程製作的功率放大器，達成了26 dB的線性增益，21.8dBm的飽和功率，18.5dBm的1dB增益壓縮點以及23%的最大功率增加效率。對於0.18微米金氧半功率放大器，經由偏壓控制電路對線性度的改善，1dB增益壓縮點增加了1.3dBm。以0.35微米矽鍺製程製作的功率放大器，達成了27.6 dB的線性增益，20.4dBm的飽和功率，20.7dBm的1dB增益壓縮點以及24%的最大功率增加效率。在符合IEEE802.11b的規格下，可達到17.8dBm的功率輸出；在符合IEEE802.11g的規格下，可達到15.2dBm的功率輸出。此外，我們也以矽鍺製程設計了一個應用於802.11n新通訊協定的雙重功率放大器。為了達成對功率放大器的最佳阻抗匹配，本論文也介紹了如何利用load pull系統將功率放大器與印刷電路板組合成為一個完整的模組。In this thesis, the basic concepts of power amplifier design are described. And we design and fabricate 2.4 GHz CMOS and SiGe power amplifiers used for IEEE 802.11b/g application. For 0.25 µm CMOS technology, the amplifier achieves linear gain = 26 dB, Psat = 21.8 dBm, P1dB= 18.5 dBm and maximum PAE= 23 %. For 0.18 µm CMOS technology power amplifier, comparing to constant voltage bias, the 1dB compress point improves 1.3 dBm with bias control circuit. For 0.35 µm SiGe HBT power amplifier, it achieves linear gain= 27.6 dB, Psat= 20.4 dBm, P1dB= 20.7 dBm, maximum PAE= 24 %, and maximum output power 17.8 dBm for IEEE 802.11b, 15.2 dBm for IEEE 802.11g. Besides, we designed a dual SiGe power amplifier for IEEE 802.11n application. For optimal impedance matching for power amplifier, we introduce how to assemble the power amplifier module with PCB by load pull system.Chapter1 Introduction 1.1 Background---------------------------------------------------------------------------------1 1.2 Motivation-----------------------------------------------------------------------------------2 1.3 Thesis organization------------------------------------------------------------------------4 Chapter2 Analysis and Design Flow of the Power Amplifier 2.1 Introduction--------------------------------------------------------------------------------5 2.2 Classification of power amplifier-------------------------------------------------------6 2.2.1 linear power amplifier---------------------------------------------------------6 2.2.2 nonlinear power amplifier----------------------------------------------------8 2.3 Load-line theory-------------------------------------------------------------------------16 2.3.1 Introduction of load-line theory-------------------------------------------16 2.3.2 Characteristic of load-line theory-----------------------------------------19 2.4 Specification—IEEE 802.11b, 802.11g----------------------------------------------25 2.5 Design flow of power amplifier-------------------------------------------------------29 Chapter 3 2.4GHz Self-biased Cascode CMOS Power Amplifier 3.1 Introduction------------------------------------------------------------------------------30 3.2 Advantages of self-biased cascode topology----------------------------------------31 3.3 Design of 0.25um CMOS power amplifier------------------------------------------32 3.3.1 Compositions of 0.25um CMOS power amplifier----------------------32 3.3.2 Design parameters of 0.25um CMOS power amplifier---------------34 3.3.3 Measured results of 0.25um CMOS power amplifier-----------------36 3.4 Design of 0.18um power amplifier---------------------------------------------------40 3.4.1 Composition of 0.18um power amplifier---------------------------------40 3.4.2 Operation principle of bias control circuit------------------------------41 3.4.3 Simulation of 0.18um power amplifier-----------------------------------43 Chapter4 2.4 GHz SiGe Power Amplifier with Temperature Compensation and Linearity Improvement Bias Circuit 4.1 Introduction------------------------------------------------------------------------------48 4.2 Analysis of nonlinearity effect in HBT (refers to [13])---------------------------49 4.3 Design of 0.35um SiGe power amplifier---------------------------------------------54 4.3.1 HBT devices selection--------------------------------------------------------54 4.3.2 HBT bias point selection----------------------------------------------------54 4.3.3 Analysis of active bias circuit----------------------------------------------55 4.3.4 Schematic and parameters of 0.35um SiGe power amplifier--------57 4.3.5 Measured results of 0.35um SiGe power amplifier--------------------59 4.4 RF Power detector-----------------------------------------------------------------------65 4.4.1 Introduction of power detector--------------------------------------------65 4.4.2 Circuit design of power detector (I)--------------------------------------66 4.4.3 Circuit design of power detector (II)-------------------------------------69 4.5 Dual Power amplifier for IEEE 802.11n---------------------------------------------71 4.5.1 Introduction of IEEE 802.11n---------------------------------------------- 71 4.5.2 Dual power amplifier for IEEE 802.11n----------------------------------72 Chapter5 Assembly of Power Amplifier Module with PCB 5.1 Introduction------------------------------------------------------------------------------74 5.2 Load-pull system-------------------------------------------------------------------------74 5.3 Matching of power amplifier module------------------------------------------------76 Chapter6 Summary and Future Work 6.1 Summary-----------------------------------------------------------------------------------78 6.2 Future work--------------------------------------------------------------------------------79en-US功率放大器射頻power amplifierRF2.4GHzthesis