Juan C.-P.Chen K.-J.Tsai C.-C.Lin K.-C.Hong W.-K.Hsieh C.-Y.Wang W.-P.Lai R.-L.Chen L.-C.Cheng H.-C.LI-CHYONG CHEN2022-08-092022-08-09200500214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-15544363240&doi=10.1143%2fJJAP.44.365&partnerID=40&md5=80ec9302d76fd100714fabd354c89eaehttps://scholars.lib.ntu.edu.tw/handle/123456789/616390The density distribution of CNTs is one of the crucial parameters determing the field-emission property of CNTs. To effectively control the density of CNTs, an inactive thin-film layer was deposited on a catalyst. The results showed that improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as a catalyst, the turn-on field could be decreased from 3.7V/μm. to 2.2 V/μm and the field-emission current density increased from 2.6 × 10-8 A/cm2 to 2.4 × 10-4 A/cm 2 when the applied field was 4 V/μm. © 2005 the japan society of applied physics.Carbon nanotubes;Density control of CNTs;Inactive thin-film layerCatalysts;Electric fields;Indium compounds;Optimization;Photolithography;Plasma enhanced chemical vapor deposition;Scanning electron microscopy;Silicon compounds;Synthesis (chemical);Thin films;Density control of CNT;Inactive thin-film layers;Microwave plasma-enhanced chemical vapor deposition (MPCVD);Plasma treatment;Carbon nanotubesjournal article10.1143/JJAP.44.3652-s2.0-15544363240