Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms

CHIH-CHUNG YANGCheng, Y.-C.Y.-C.ChengTseng, C.-H.C.-H.TsengHsu, C.C.HsuMa, K.-J.K.-J.MaFeng, S.-W.S.-W.FengLin, E.-C.E.-C.LinYang, C.-C.C.-C.YangChyi, J.-I.J.-I.ChyiCHIH-CHUNG YANG2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-0141678203&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/302037[SDGs]SDG7Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanismsconference paper10.1117/12.477794