國立臺灣大學物理系所Chen, C.H.C.H.ChenChen, Y.F.Y.F.Chen2006-09-272018-06-282006-09-272018-06-282000-04http://ntur.lib.ntu.edu.tw//handle/246246/2006092712003714868The electrical conduction properties of metal/porous silicon/n-Si/metal have been investigated using current-voltage (I-V) measurements. The characteristics for all devices show a rectifying behavior with ideality factor close to unity. A value of 0.79 eV for the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics.application/pdf144182 bytesapplication/pdfzh-TWjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/2006092712003714868/1/00150.pdf