Chang, F.Y.F.Y.ChangHAO-HSIUNG LINCHUNG-CHIH WU2020-06-112020-06-112003https://www.scopus.com/inward/record.uri?eid=2-s2.0-0038383178&doi=10.1063%2f1.1585125&partnerID=40&md5=a37248459f41175f285a43ed54894e4dThe properties of InAs/InGaAs quantum dots and lasers were examined and the effect of InGaAs capping layer on these properties was also studied. The quantum dots were grown by gas-source molecular-beam epitaxy. The analysis showed that the quantum-dot density can be controllably changed from 2.3×1010 to 1.7×1011 cm-2 by using different capping methods.Current density; Ground state; Molecular beam epitaxy; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor lasers; Gas-source molecular-beam epitaxy; Semiconductor quantum dotsjournal article10.1063/1.15851252-s2.0-0038383178