Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Ho, Ching YuanChing YuanHoShih, Kai-YaoKai-YaoShihHe, Jr HauJr HauHe2011-08-022018-07-052011-08-022018-07-052010http://ntur.lib.ntu.edu.tw//handle/246246/236371en-USGate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench fillingjournal article10.1016/j.mee.2009.08.009http://ntur.lib.ntu.edu.tw/bitstream/246246/236371/-1/02.pdf