Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2O

JENN-GWO HWU2018-09-102018-09-101994http://www.scopus.com/inward/record.url?eid=2-s2.0-0348192644&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/307552Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2Ojournal article10.1063/1.111343