Wu, B.-C.B.-C.WuTSUNG-TE LIU2020-06-112020-06-11201815461998https://scholars.lib.ntu.edu.tw/handle/123456789/499796https://www.scopus.com/inward/record.uri?eid=2-s2.0-85052998612&doi=10.1166%2fjolpe.2018.1554&partnerID=40&md5=09f1db9a3f1f331d222eb1e3f74875efIn this paper, we review circuit techniques for read performance enhancement of magnetic random-access memories (MRAMs) that are based on magnetic tunnel junction (MTJ) devices with spin transfer torque (STT) switching mechanism for normally-off and nonvolatile computing. First, a brief discussion of the construction and operation of STT-MRAM, and the mechanism of operation of STT-MTJ devices is presented. Circuit sensing techniques are then introduced and divided into two categories - current mode and voltage mode - according to their sensing scheme. These techniques are described in detail with comprehensive case studies from literature, followed by a thorough comparison and discussion of their respective design space. Copyright © 2018 American Scientific Publishers All rights reserved.Embedded nonvolatile memory (eNVM); Low-power memory circuit; Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Nonvolatile computing; Spin transfer torque (STT); Spintronicsjournal article10.1166/jolpe.2018.15542-s2.0-85052998612