Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study

MINGHWEI HONGWan, H.W.H.W.WanChang, P.P.ChangLin, T.D.T.D.LinChang, Y.H.Y.H.ChangLee, W.C.W.C.LeePi, T.W.T.W.PiKwo, J.J.Kwo2019-12-272019-12-272017https://scholars.lib.ntu.edu.tw/handle/123456789/443303Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative studyjournal article10.1016/j.jcrysgro.2017.04.0062-s2.0-85018725137https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018725137&doi=10.1016%2fj.jcrysgro.2017.04.006&partnerID=40&md5=a0264644cd7253f2d45420551ffd45b5