Stani?, S.S.Stani?PAO-TI CHANG et al.2020-01-152020-01-15200701689002https://scholars.lib.ntu.edu.tw/handle/123456789/449243https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547813184&doi=10.1016%2fj.nima.2007.05.277&partnerID=40&md5=324220b0e2354381fb89aa7a90f13f56Monolithic Active Pixel Sensors (MAPS) may become the building blocks of vertex detectors at future high luminosity e+ e- colliders. Requiring an active layer only a few tens of microns thick, MAPS can be thinned to ∼ 50 μ m, which reduces the multiple scattering of primary particles. Deep sub-micron CMOS processes allow for small pixel size, needed for adequate single point resolution and low occupancy at a Super B factory. Major concerns with MAPS are readout speed and signal stability for large pixel arrays. Laser bench test results of a full size prototype (CAP3) with 118,784 readout pixels and a 5-deep correlated double sampling pipeline are presented. Lessons learned are applied to a design iteration and investigation of two new digital readout sensor designs, all included in the CAP4 prototype chip. © 2007 Elsevier B.V. All rights reserved.B factory; CMOS; Monolithic active pixel sensor; Radiation hard; Vertex detector[SDGs]SDG11Light scattering; Luminance; Monolithic integrated circuits; Radiation hardening; Active layer; Monolithic active pixel sensor; Monolithic Active Pixel Sensors; Sensor designs; Vertex detector; Sensorsjournal article10.1016/j.nima.2007.05.2772-s2.0-34547813184WOS:000242742300032https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547813184&doi=10.1016%2fj.nima.2007.05.277&partnerID=40&md5=324220b0e2354381fb89aa7a90f13f56