Kao S.-FHuang Y.-MHuang S.-KWeng S.-YKuo H.-CCHIEN-CHUNG LIN2022-04-252022-04-252021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123191612&doi=10.1109%2fIPC48725.2021.9592848&partnerID=40&md5=f7394943174b41094f5a7b1b3b64b279https://scholars.lib.ntu.edu.tw/handle/123456789/607005We reported an InP-based photosensor with the thickness less than 3 micron due to the substrate removal process. A responsivity of 0.345 W/A was obtained at 850nm, and the extended operating wavelength in blue can be achieved by extra colloidal quantum dot coating. ? 2021 IEEE.III-V semiconductorsNanocrystalsSemiconducting indium phosphideSemiconductor quantum dotsSolsColloidal quantum dotsOperating wavelengthPhotosensorRemoval processResponsivitySubstrate removalThin-filmsIndium phosphideconference paper10.1109/IPC48725.2021.95928482-s2.0-85123191612