A Novel Design of P Implanted Regions for a Power MOSFET

Yeh, W.-B.W.-B.YehSu, Y.-C.Y.-C.SuLee, K.-Y.K.-Y.LeeCheng, C.-H.C.-H.ChengHuang, C.-F.C.-F.HuangKUNG-YEN LEE2020-01-172020-01-172018https://scholars.lib.ntu.edu.tw/handle/123456789/451510Kansai[SDGs]SDG7A Novel Design of P Implanted Regions for a Power MOSFETconference paper10.1109/IMFEDK.2018.85819722-s2.0-85060704157https://www.scopus.com/inward/record.uri?eid=2-s2.0-85060704157&doi=10.1109%2fIMFEDK.2018.8581972&partnerID=40&md5=d9f0f1f44bcc0c48e811c2fd62837f9e