Chuang C.-MCheng Y.-HYUH-RENN WU2022-04-252022-04-2520221077260Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85115673135&doi=10.1109%2fJSTQE.2021.3114411&partnerID=40&md5=c470f9ec4d8ff7e7c0956fe71340d529https://scholars.lib.ntu.edu.tw/handle/123456789/607376Design rules are proposed for UVA vertical-cavity surface-emitting laser diodes, and the modal gain and cavity properties are analyzed using an electro-optical numerical model. To achieve a low threshold current, it is important to align the gain-peak and resonance wavelengths, but the quantum-confined Stark effect makes that difficult because the former wavelength shifts with changing current density. The relationship between the gain peak and the injection current is discussed. Also, the quantum-well design affects the gain characteristics, and the gain properties with different quantum-well number, composition, and width are discussed. ? 1995-2012 IEEE.InGaN Quantum welllaser diodeUVAVCSELGallium alloysIII-V semiconductorsIndium alloysLaser pulsesNumerical modelsQuantum well lasersSemiconductor alloysSemiconductor quantum wellsTransceiversDistributed-bragg-reflectorsElectro-opticalGain peaksInGaN quantum wellsOptical scatteringResonance wavelengthsThreshold currentsVertical-cavity surface emitting laserVertical-cavity surface-emitting laser diodeSurface emitting lasersjournal article10.1109/JSTQE.2021.31144112-s2.0-85115673135