Huang, Chang HsunChang HsunHuangWeng, Chen YuanChen YuanWengChen, Kuan HungKuan HungChenChou, YiYiChouWu, Tian LiTian LiWuYI-CHIA CHOU2023-06-202023-06-202023-01-0119448244https://scholars.lib.ntu.edu.tw/handle/123456789/632950In this work, the ultrathin two-dimensional (2D) indium oxide (InOx) with a large area of more than 100 μm2 and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InOx has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InOx, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InOx memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InOx memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca2+ mimic dynamic in 2D-InOx memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InOx memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.enindium oxide | liquid-metal printing | memristor | multiple-state memory | two-dimensional materialjournal article10.1021/acsami.3c03002372022222-s2.0-85160744161https://api.elsevier.com/content/abstract/scopus_id/85160744161