Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers

Chu, L.K.L.K.ChuChu, R.L.R.L.ChuLin, T.D.T.D.LinLee, W.C.W.C.LeeLin, C.A.C.A.LinHuang, M.L.M.L.HuangLee, Y.J.Y.J.LeeKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443385[SDGs]SDG7Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layersconference paper10.1016/j.sse.2010.04.0342-s2.0-77954218873https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954218873&doi=10.1016%2fj.sse.2010.04.034&partnerID=40&md5=270b6b5c7d232ff58dd4323a64d67100