GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>

Wan, H.W.H.W.WanLin, K.Y.K.Y.LinCheng, C.K.C.K.ChengSu, Y.K.Y.K.SuLee, W.C.W.C.LeeHsu, C.H.C.H.HsuPi, T.W.T.W.PiKwo, J.J.KwoMINGHWEI HONGCHIA-KUEN CHENG2019-12-272019-12-272017https://scholars.lib.ntu.edu.tw/handle/123456789/443305GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>journal article10.1016/j.jcrysgro.2016.11.1182-s2.0-85012913946https://www.scopus.com/inward/record.uri?eid=2-s2.0-85012913946&doi=10.1016%2fj.jcrysgro.2016.11.118&partnerID=40&md5=a4c49d2bba7bc03027fdb0e6a173b9e0