Quantum confinement effects of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique

Chang, T.C.T.C.ChangChang, C.Y.C.Y.ChangJung, T.G.T.G.JungChen, P.A.P.A.ChenTsai, W.C.W.C.TsaiWang, P.J.P.J.WangYANG-FANG CHENPan, S.C.S.C.Pan2018-09-102018-09-101994http://www.scopus.com/inward/record.url?eid=2-s2.0-0028713818&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/307003Quantum confinement effects of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition techniquejournal article10.1007/BF002155762-s2.0-0028713818