Characterization of edge fringing effect on the C-V responses from depletion to deep depletion of MOS(p) capacitors with ultrathin oxide and high-κ dielectric

JENN-GWO HWU2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84857648479&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/370339Characterization of edge fringing effect on the C-V responses from depletion to deep depletion of MOS(p) capacitors with ultrathin oxide and high-κ dielectricjournal article10.1109/TED.2011.2178605