The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

JOE-AIR JIANG2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-80053375692&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/369901[SDGs]SDG7The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodesjournal article10.1016/j.jlumin.2011.09.001