Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate

Lin, G.-R.G.-R.LinLin, C.-J.C.-J.LinGONG-RU LIN2020-06-112020-06-112004https://scholars.lib.ntu.edu.tw/handle/123456789/500092Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substratejournal article10.1063/1.17750412-s2.0-5044232551https://www.scopus.com/inward/record.uri?eid=2-s2.0-5044232551&doi=10.1063%2f1.1775041&partnerID=40&md5=e78e77c33ee2c9146410a717a6dfd079