Advanced HEMT characteristics of epitaxial quality-improved GaN by using patterned sapphire

Chien, C.Y.C.Y.ChienHuang, C.C.C.C.HuangYi, C.K.C.K.YiYen, C.W.C.W.YenCHIEH-HSIUNG KUAN2021-02-262021-02-262019https://www.scopus.com/inward/record.url?eid=2-s2.0-85070059343&partnerID=40&md5=e0245109216ac6a1db4b695792cc67bchttps://scholars.lib.ntu.edu.tw/handle/123456789/549885[SDGs]SDG7Advanced HEMT characteristics of epitaxial quality-improved GaN by using patterned sapphireconference paper10.1149/08905.0035ecst2-s2.0-85070059343