Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

I-CHUN CHENG2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-1542544679&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303209Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channelsconference paper