Hsiao, Ching-LienChing-LienHsiaoHsu, Hsu-ChengHsu-ChengHsuChen, Li-ChyongLi-ChyongChenWu Chien-TingChen, Chun-WeiChun-WeiChenChen, MinMinChenTu, Li-WeiLi-WeiTuChen, Kuei-HsienKuei-HsienChen2008-12-312018-06-282008-12-312018-06-28200700036951http://ntur.lib.ntu.edu.tw//handle/246246/95597https://www.scopus.com/inward/record.uri?eid=2-s2.0-35648956127&doi=10.1063%2f1.2804568&partnerID=40&md5=1235ca26814787b624505c2032b17fe0Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3. © 2007 American Institute of Physics.application/pdf407760 bytesapplication/pdfen-US[SDGs]SDG7Carrier concentration; Linewidth; Molecular beam epitaxy; Photoluminescence spectroscopy; Semiconducting indium compounds; Silicon; Transmission electron microscopy; Excitation power density; Mott transition; Varshni equation; Wurtzite structure; Microcrystalsjournal article10.1063/1.28045682-s2.0-35648956127http://ntur.lib.ntu.edu.tw/bitstream/246246/95597/1/21.pdf