Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity

CHIEH-HSIUNG KUANPeng, Y.H.Y.H.PengChen, C.C.C.C.ChenKuan, C.H.C.H.KuanCheng, H.H.H.H.ChengCHIEH-HSIUNG KUAN2018-09-102018-09-102002http://www.scopus.com/inward/record.url?eid=2-s2.0-0036459453&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/298221Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivityconference paper