ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °c with three-pulsed precursors in every growth cycle

Cheng, Y.-C.Y.-C.ChengYuan, K.-Y.K.-Y.YuanChen, M.-J.M.-J.ChenMIIN-JANG CHEN2020-05-122020-05-122016https://scholars.lib.ntu.edu.tw/handle/123456789/491734ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °c with three-pulsed precursors in every growth cyclejournal article10.1016/j.jallcom.2016.05.2892-s2.0-84973358443https://www.scopus.com/inward/record.uri?eid=2-s2.0-84973358443&doi=10.1016%2fj.jallcom.2016.05.289&partnerID=40&md5=b015e7dac765e989da328846a056d699