國立臺灣大學物理系所Chen, J.W.J.W.ChenWang, J.C.J.C.WangChen, Y.F.Y.F.Chen2006-09-272018-06-282006-09-272018-06-281996-04http://ntur.lib.ntu.edu.tw//handle/246246/20060927115953132733We have studied the dielectric properties of the sdsCu04 samples that were annealed under different conditions by means of capacitance C(T,u) and dissipation factor D(T,w) measurements with the test frequency (J in the range 20 Hz to 1 MHz and at temperature T between 5 K and 325 K. \\:e observed two frequency-dependent peaks in the D(T,c;) curves and corresponding features in the C(T,u) curevs. The first peak occurs at T =: 230 K is due to the occurrence of the antiferromagnetic transition in the sample and rhe second one occurs at T z 120 K is related to the change ol the conduction mechanism in this system.application/pdf171681 bytesapplication/pdfzh-TWjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/20060927115953132733/1/583.pdf