High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta 2O5 as a controlled gate dielectric

Dai, Min-KunMin-KunDaiLin, T.-Y.T.-Y.LinYang, M.-H.M.-H.YangCHIH-KUNG LEEHuang, C.-C.C.-C.HuangYANG-FANG CHEN2020-04-282020-04-282014https://scholars.lib.ntu.edu.tw/handle/123456789/486135High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta 2O5 as a controlled gate dielectricjournal article10.1039/c4tc00598h2-s2.0-84902993846https://www.scopus.com/inward/record.uri?eid=2-s2.0-84902993846&doi=10.1039%2fc4tc00598h&partnerID=40&md5=c10aea5ae5055faa2382e6ffcc234b69