Lo, S.-T.S.-T.LoCHI-TE LIANG et al.2018-09-102018-09-10201000381098http://www.scopus.com/inward/record.url?eid=2-s2.0-77957371004&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/357180We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulatorquantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electronelectron interaction effects for the observed transition in our study. © 2010 Elsevier Ltd. All rights reserved.A. Semiconductor; B. Epitaxy; D. Electronelectron interactions; D. Quantum Hall effectA. Semiconductor; B. Epitaxy; D. Electronelectron interactions; Hall conductivity; Hall resistivity; Low temperatures; Perpendicular magnetic fields; Quantum Hall effect; Temperature dependence; Transport measurements; Two-dimensional electron system (2DES); Epitaxial growth; Gyrators; Hall effect; Hall effect devices; Quantum theory; Magnetic field effectsjournal article10.1016/j.ssc.2010.07.0402-s2.0-77957371004WOS:000282157000010