Kajale, Shivam NitinShivam NitinKajaleNguyen, ThanhThanhNguyenTUAN HUNG NGUYENLi, MingdaMingdaLiSarkar, DeblinaDeblinaSarkar2025-09-242025-09-242024https://www.scopus.com/inward/record.uri?eid=2-s2.0-85188045630&doi=10.1126%2Fsciadv.adk8669&partnerID=40&md5=04127c7602d091221f55a4eaf17d38d7https://scholars.lib.ntu.edu.tw/handle/123456789/732292Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices. However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, we report a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, Fe<inf>3</inf>GaTe<inf>2</inf>, above room temperature (up to 320 K). We use the unconventional out-of-plane anti-damping torque from an adjacent WTe<inf>2</inf> layer to enable such switching with a low current density of 2.23 × 106 A cm?2. This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.Energy EfficiencyFerromagnetic MaterialsFerromagnetismRoom TemperatureSpintronicsSuperconducting MaterialsTellurium CompoundsTorqueTorque ControlTungsten CompoundsVan Der Waals ForcesDeterministicsElectric ControlEnergy EfficientFerromagnetsHigh Density EnergyPerpendicular Magnetic AnisotropySpin OrbitsSpintronics DeviceTwo-dimensionalVan Der WaalMagnetic AnisotropyAnisotropyArticleCurrent DensityMagnetOrbit ScoreRoom TemperatureTorque[SDGs]SDG7Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperaturejournal article10.1126/sciadv.adk86692-s2.0-85188045630