Dc characterization of the Ga<inf>0.51</inf>In<inf>0.49</inf>P/GaAs tunneling emitter bipolar transistor

SHEY-SHI LUCHUNG-CHIH WUHuang, C.C.C.C.HuangWilliamson, F.F.WilliamsonNathan M.I.2020-06-112020-06-111992https://scholars.lib.ntu.edu.tw/handle/123456789/498120Dc characterization of the Ga<inf>0.51</inf>In<inf>0.49</inf>P/GaAs tunneling emitter bipolar transistorjournal article10.1063/1.1070622-s2.0-0000716494https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000716494&doi=10.1063%2f1.107062&partnerID=40&md5=0c463a06d343b6dbcf08219bfa4d6708