2015-01-012024-05-16https://scholars.lib.ntu.edu.tw/handle/123456789/668694摘要：本計畫的研究目標在於結合「高電子遷移率電晶體」的設計概念與「大面積相容製程技術」，製作兼具低成本與良好高頻特性之大面積電子元件電路。現今之高電子遷移率電晶體之主動層材料多利用分子束磊晶或是高溫邁衝雷射蒸鍍技術獲得，然而這些方法不僅製程成本高，且與大面積製程技術不相容，因此限制其應用範圍。本計畫將採用低溫磁控濺鍍或原子層沉積法製備之複晶氧化鎂鋅/氧化鋅異質結構作為研究主體，藉由界面極化效應所產生的載子之屏蔽效應來降低晶界能障，進而提升元件與電路之特性。在為期三年的計畫中，第一年以系統性分析研究複晶氧化鎂鋅/氧化鋅異質結構電性與氧化鋅薄膜之電子特性及結晶特性等材料性質之相關性為主；第二年則是開發複晶氧化鎂鋅/氧化高電子遷移率電晶體，以複晶氧化鎂鋅/氧化鋅作為薄膜電晶體的主動層，針對元件結構、電性與製程參數間的相關性進行分析與最佳化；第三年則將前兩年之研究成果進行整合，設計製作以複晶氧化鎂鋅/氧化鋅高電子遷移率電晶體為基底之反相器與環型振盪器等基本電路，以期能完成兼具低成本與良好高頻特性之大面積電子元件電路。<br> Abstract: High electron mobility transistors (HEMTs) are desirable for high speed and high performance circuitry. A commonly used material system is GaAs/AlGaAs. Recently, attention has been drawn to MgZnO/ZnO and MnZnO/ZnO systems. Most of the HEMT heterostructures demonstrated previously are based on pulse laser deposition or molecular beam epitaxy on sapphire substrates, which is not suitable for low-cost large-area electronic applications. The goal of this project is to integrate the concept of HEMT with large-area compatible processing techniques to achieve low-cost large-area electronics with good high-frequency performance. Polycrystalline MgZnO/ZnO heterostructure prepared by low-temperature rf-magnetron sputtering or atomic layer deposition will be studied. The electrical properties of the devices and circuits based on the polycrystalline MgZnO/ZnO material system are expected to be enhanced via the screening of grain boundary potential by the polarization-induced charges. In the first year of the proposed three-year project, we will perform a systematic study of the electrical properties of the polycrystalline MgZnO/ZnO heterostructures made by large-area compatible processing techniques by correlating the electrical properties with the electronic and crystal structures of the MgZnO and ZnO layers. The second-year task is to develop polycrystalline MgZnO/ZnO HEMT by using polycrystalline MgZnO/ZnO heterostructure as the channel layer. The electrical performance of these devices will be evaluated and optimized through the device configuration and through the electronic property and crystal structure of each device layers. The target of the last year is to integrate the technologies developed previously to demonstrate polycrystalline MgZnO/ZnO HEMT inverters, ring oscillators, and level-shifting circuits with good high-frequency performance.複晶氧化鎂鋅/氧化鋅異質接面高電子遷移率電晶體大面積電子polycrystalline MgZnO/ZnO heterostructureHigh electron mobility transistorlarge-area electronics