Reliability of low-temperature-processing hafnium oxide gate dielectrics prepared by cost-effective nitric acid oxidation technique

JENN-GWO HWU2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-37549032666&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/329942Reliability of low-temperature-processing hafnium oxide gate dielectrics prepared by cost-effective nitric acid oxidation techniquejournal article10.1109/TDMR.2007.910129