Huge positive magnetoresistance in a gated AlGaAsGaAs high electron mobility transistor structure at high temperatures

CHI-TE LIANG2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-84939463008&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/339688[SDGs]SDG7Huge positive magnetoresistance in a gated AlGaAsGaAs high electron mobility transistor structure at high temperaturesjournal article10.1063/1.29063602-s2.0-84939463008