A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array

Chen, Chi-EnChi-EnChenTu, Hon-YihHon-YihTuHuang, Shih-MinShih-MinHuangCheng, Pi-JuPi-JuChengHsu, Ming-ChiehMing-ChiehHsuWang, Tzu-JuiTzu-JuiWangYeh, Shang-FuShang-FuYehYi-Ping Chao, CalvinCalvinYi-Ping ChaoWu, Jau-YangJau-YangWuWu, Chao-HsinChao-HsinWu2026-01-122026-01-122025-12-01https://www.scopus.com/record/display.uri?eid=2-s2.0-105023953960&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/735231This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods. Through this approach, we first achieve a comprehensive evaluation of the full-chip afterpulsing effect by adjusting the ratio between gated-on time and gated-off time and employing a sampling window technique. Experimentally validated using a room-temperature-operated 160 × 116 Ge-on-Si single photon avalanche diode array, the approach clearly reveals the potential pixel-to-pixel variations in afterpulsing behavior across SWIR single-photon avalanche diode arrays, highlighting the critical importance of full-chip evaluation for designing and optimizing gating period.trueA novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD arrayjournal article10.1063/5.02910802-s2.0-105023953960